Subsurface damage evolution of β-Ga2O3 (010) substrates during lapping and chemical mechanical polishing

Abstract

For semiconductor single crystal substrates, subsurface damage (SSD) is an important factor for device failure. For β-Ga2O3 with two cleavage planes, the SSD is the key issue that needs to be addressed. In this work, β-Ga2O3 (010) substrates were lapped and polished precisely. The formation and evolution mechanisms of SSD were analyzed by cross-section transmission electron microscopy and wet chemical etching techniques. The linear distribution of scratches was found on the substrates after lapping. After chemical mechanical polishing (CMP), the surface scratches were eliminated. However, the SSD layer may still exist under the surface. Chemical etching was developed to identify the "invisible damage" to the CMP-finished (010) substrate. The SSD including nanocrystalline, tilt boundary, twist boundary, and high-density dislocations in β-Ga2O3 was first reported. Distinctively, there was no slip occurrence in the SSD of the (010) plane different from the (100) and (001) planes. The Schmid factor of multiple slip systems was calculated to analyze the cause of no slip on the subsurface. The formation mechanism of SSD was believed that when the slip system could not be activated, the stress was released through rotation and distortion of the crystal plane. The accumulation of grain boundary dislocations at twist grain boundary junctions provided a driving force for the formation of nanovoids. The relationship of substrate damage evolution and crystal strain with different machining parameters was established by high-resolution X-ray diffraction and Raman spectra. A non-damaging β-Ga2O3 (010) substrate with a surface roughness of less than 0.2 nm was obtained by the optimized CMP process. The research results had guiding significance for damage control of β-Ga2O3 and other brittle crystals in ultra-precision machining.