Abstract
Dilute Al-Ge alloys provide a good model for metal-semiconductor interface studies because clean interfaces in different orientations can be grown by precipitating Ge from the A1 terminal solid solution. A great variety of orientation relationships and morphologies have been observed in this alloy, including plates, laths, needles and tetrahedral Needle precipitates along <100> A1 which are invariably twinned form in abundance during low-temperature aging. Since <110> Ge is exactly parallel to the needle axis, high resolution microscopy allows direct and accurate analysis of the precipitate orientation relationship, morphology, interface and defect structure.It was reported earlier that the particle morphology usually conformed to the symmetry of its orientation relationship with the matrix. This rule was broken only by some of the twinning defects observed. In the present contribution we focus attention on the substructure formed by these twins and their relationship to the particle morphology.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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