Substrate-Controlled Electronic Properties of Perovskite Layer in Lateral Heterojunction Configuration

Abstract

In this work, we fabricated halide perovskite-based lateral heterojunction devices with nickel oxide/titanium oxide all back contacts, allowing us to access the perovskite surface directly for analysis with various advanced techniques, including ultraviolet and X-ray photoemission spectroscopy (UPS/XPS), Kelvin probe force microscopy (KPFM), and surface photovoltage (SPY), to discern the role of selective contacts. Specifically, by tuning of the selectivity of the contacts, e.g., through varying the level of nickel oxidation, we show that the selectivity of the contacts induces a gradient in carrier concentration across the surface of the active layer that is connected to carrier extraction at the buried interface and hence to device functionality.