Abstract
In this paper, atmospheric pressure plasma jet was used to deposit SiOx film on aluminum surface and the influence of the substrate temperature on the film properties was studied. The results showed that the substrate temperature increase promoted the precursor decomposition and film growth rate. Si-O-Si bond angle and film composition changes were observed after substrate temperature increased. An excellent insulation property of the deposited film was obtained at a moderate substrate temperature of 300 °C. An excessive increase of the substrate temperature reduced the film growth rate and even led to porous structure. In addition, aging experiments under thermal condition and high electric field duration confirmed that the estimated service life of the film was close to 50 years. This paper provides a universal treatment method for improving nonthermal plasma deposited film properties.
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