Abstract
The transparent electrode films SnO2: Sb were prepared by reactive magnetron sputtering method on glass substrate with various substrate temperatures. The material of target is alloy of Sn (99,5% purity) doped Sb (5% Sb by weight). The deposition processes were carried out in mixture of Ar (99,99% purity) and 02 (99,999% purity) gas. The vacuum inside the deposition chamber can get to about 10-5 torr. The substrate temperatures during the depositing processes were kept at fixed values between the room temperature and 450ºC. The dependence of crystal size and conductivity of films on substrate temperature were also investigated.
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