Abstract
Co-ferrite (CoFe2O4) thin films were pulsed laser deposited on fused quartz substrate at different substrate temperatures (TS) ranging from room temperature (RT) to 750°C in oxygen pressure of 0.16 mbar. All the deposited films were ex-situ annealed at different temperatures (TA) between 350 and 1100°C in air for 2 h and were furnace cooled. The spontaneous magnetization (4πMS) of the as deposited film shows an expected increase as TS goes up, but always remains smaller than the bulk target value. For the annealed films deposited at different TS, we observed that 4πMS of the films deposited at lower TS increases at a faster rate with the increase in TA than the films deposited at higher TS. The 4πMS values higher than the Co-ferrite bulk value (5300G) were observed in the annealed films deposited at lower TS . The highest value of 6550G has been observed for the RT deposited film annealed at 1000°C, which is 24% higher than the bulk value. These results are explained on the basis of grain growth and the cation distribution in the films.
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