Abstract
Substrate temperature is an importance parameter controlling nucleation and growth dynamics during the thin film epitaxy in MBE system. The most covenant methods able to determine the substrate temperature is based on some calibration procedures, where substrate temperature is calculated as a function of electric power dissipated in heater system. This paper presents possibility of substrate temperature control based on reflection high-energy electron diffraction (RHEED) intensity measurements as in situ technique. Temperature dependence of the specularly reflected electron beam intensity versus the substrate temperature is predicted by dynamical theory of electron scattering. The theoretical RHEED intensity dependence versus Si(1 1 1) substrate temperature was obtained from one-dimensional rocking-curve calculation.
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