Abstract
Cu2ZnSn(S,Se)4 (CZTSSe) thin films have been grown by RF-magnetron sputtering from a quinary CZTSSe target without subsequent selenization or sulfuration. We investigated the compositions, surface morphology, and crystal structural and optical properties of the CZTSSe thin films. At a substrate temperature of 450°C, the CZTSSe thin films displayed nearly ideal stoichiometric compositions that contributed to their grain growth and crystalline quality. The x-ray diffraction results confirmed that the CZTSSe thin films exhibited a (112) plane preferred orientation with good crystalline quality. The bandgap energy was approximately 1.45 eV. This study determined the optimum substrate temperature to improve the performance of CZTSSe thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
