Abstract
In the case of AsSe:Sn and Ge 27Sb 13Se 60 amorphous thin films deposited on Si(100) wafer, it was observed that the diffraction pattern is distorted by the escape-peak, which is very sensitive in intensity to the wafer's position in its own plane. This peak was found to be superimposed on the first sharp diffraction peak, which characterises the medium range order in the amorphous materials. A method for the minimisation of the escape-peak effect is presented. A different method is suggested to avoid this peak.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
