Abstract
AbstractIn this work we investigated the influence of the polycrystalline silicon substrate on the titanium silicide formation process. The results are compared to those obtained when single crystal silicon wafers are used. We observed that the polycrystalline substrate affects both the kinetics of formation of the phase TiSi2-C49 and the temperature of transition from TiSi2-C49 to TiSi2-C54. The temperature of this phase transition is also influenced by the presence of phosphorous in the polycrystalline silicon substrate. In order to prevent degradation of the silicide film formed on polycrystalline silicon, the maximum temperature of RTP has to be lower than 900°C. Due to the high chemical reactivity between titanium and oxygen present in the ambient, we also investigated the use of a protective cap. For this purpose, a thin amorphous silicon layer was sputter-deposited sequentially on Ti films without breaking the vacuum.
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