Abstract
A simple spray pyrolysis is used to develop ytterbium sesquioxide (Yb2O3) on aluminoborosilicate glass substrates at variable substrate temperatures. A cubic crystal system grows along the (222) plane as substrate temperature changes from 600 to 700 °C. Dispersed grains become cluster-like particles in film structures as the temperature rises. The Yb2O3 composition purity.is further ensured by energy dispersive x-ray analyses. Structure improves with optical spectrum transparency. The altered crystallite and grain size shifted the bandgap energy to higher wavelengths. Regarding Ag/n-Yb2O3/p-Si/Ag heterojunction diode performance, the barrier height increases from 0.67 to 0.70 as the substrate temperature rises. The film structure at 700 °C exhibited the best results, including an electrical conductivity of 2.503×10–15 S/cm and an activation energy of 0.129 kJ/mol. In addition, the estimated ideality factors (n) are 4.5 and 2.9 under dark and light conditions, respectively.
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