Abstract
InP MOSFET devices with a SiO2 dielectric layer have been fabricated on p-type and SI substrates. Surface mobilities in the range 250 to 750 cm2 V−1 s−1 have been routinely obtained from all substrates except those from one crystal of Fe-doped SI InP. Defect etching studies have revealed large prismatic dislocation loops in this crystal. A correlation between these observations is proposed.
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