Abstract
AbstractThis paper studied the low‐field tunnel‐type transport characteristics of polycrystalline and c‐axis‐oriented La0.7Pb0.3MnO3 (LPMO) thin films. Polycrystalline thin films were fabricated on SiO2/Si(100) substrate (film A), on SiO2/Si substrate with yttria‐stabilized zirconia (YSZ) buffer layer (film B), and on c‐axis‐oriented thin film grown on LaAlO3(001) (LAO) single crystal substrate (film C) using the soft‐chemical deposition method. A YSZ buffer layer acts as a barrier against inter‐diffusion. As a result, it decreases the amount of dead layers generated from the interface and helps to produce qualitative films for application of magnetoresistive elements. The magnetoresistance (MR) ratio was 0.52%, 0.7%, and 0.4% for film A, film B, and film C under the applied field of 500 Oe at 300 K, respectively. The polycrystalline film had denser boundaries than the c‐axis oriented film, i.e., the polycrystalline film gave more effective potential barrier regions than the c‐axis oriented film. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
