Abstract
We investigated major performance metrics of graphene interconnects on 2D layered insulator - hexagonal boron nitride (h-BN). Comparative study was made on three different material systems, including CVD graphene on h-BN, CVD graphene on SiO 2 , and exfoliated graphene on SiO 2 , with respect to electrical conduction and breakdown power density. Remarkable improvement in conductivity is observed in CVD graphene on h-BN substrate as compared with CVD graphene on SiO 2 and exfoliated graphene on SiO 2 . The carrier mobility in CVD graphene on h-BN exhibits a value of ∼15,000 cm2/V-s at carrier density of 1×1012 cm−2. Higher thermal conductivity of h-BN (as compared with that of SiO 2 ) facilitates heat dissipation, leading to improvement in breakdown power density. It is demonstrated that using h-BN as substrate material could help breaking the performance and reliability limits imposed by SiO 2 substrate.
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