Abstract
Abstract High ion conducting room temperature stabilized γ-Bi 2 Cu 0.1 V 0.9 O 5.35 has been successfully synthesized in thin film form on glass and alumina substrates. The films were characterized for their structural properties like XRD, SEM, EDAX and AFM. Bi 2 Cu 0.1 V 0.9 O 5.35 films deposited on alumina substrate showed single-phase nature with tetragonal crystal structure. The AFM study reveals the considerable change in growth morphology on alumina substrate. The temperature dependent ionic conductivity of Bi 2 Cu 0.1 V 0.9 O 5.35 films synthesized on glass and alumina substrates were studied using impedance spectroscopy. The high ionic conductivity has been observed at lower temperature for Bi 2 Cu 0.1 V 0.9 O 5.35 thin films synthesized on alumina substrates. With these comparisons, alumina substrate proves its candidature for deposition of Bi 2 Cu 0.1 V 0.9 O 5.35 films for solid oxide fuel cell applications.
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