Substrate-dependent electronic structure and film formation of MAPbI3 perovskites

Abstract

We present investigations on the interface formation between the hybrid perovskite MAPbI3 and various substrates, covering a wide range of work functions. The perovskite films are incrementally evaporated in situ while the electronic structure is evaluated using photoelectron spectroscopy. Our results show that there is an induction period in the growth of the perovskite during which volatile compounds are formed, catalyzed by the substrate. The duration of the induction period depends strongly on the nature of the substrate material, and it can take up to 20–30 nm of formal precursor deposition before the surface is passivated and the perovskite film starts forming. The stoichiometry of the 2–3 nm thin passivation layer deviates from the expected perovskite stoichiometry, being rich in decomposition products of the organic cation. During the regular growth of the perovskite, our measurements show a deviation from the commonly assumed flat band condition, i.e., dipole formation and band bending dominate the interface. Overall, the nature of the substrate not only changes the energetic alignment of the perovskite, it can introduce gap states and influence the film formation and morphology. The possible impact on device performance is discussed.