Abstract
Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequency (RF) it becomes a key issue. In deep sub micron MOSFETs hot carrier effect induces device degradation. The impact ionization phenomenon is one of the main hot carrier effects. The paper covers the process and device level simulation of MOSFETs by TCAD and the substrate current comparison in lightly and heavily doped MOS. PMOS and NMOS devices are virtually fabricated with the help of ATHENA process simulator. The modeled devices include the hot carrier effects. The MOS devices are implemented on lightly and heavily doped substrates and substrate current is evaluated and compared with the help of ATLAS device simulator. Substrate current is better in lightly doped substrate than in heavily doped one. Drain current is also better in lightly doped than heavily doped substrates. Silvaco TCAD Tool is used for Virtual fabrication and simulation. ATHENA process simulator is used for virtual fabrication and ATLAS device simulator is used for device characterization.
Highlights
The most important concern in the current digital technology is the privacy and security of information
When there is a slight difference from the used initial value, it will cause a huge difference in the cipher-text produced using chaos
The proposed method is the combination of Data Encryption Standard (DES) Schedule, Chaos and RSA cryptosystem
Summary
The most important concern in the current digital technology is the privacy and security of information. It is one of the principal challenges of resource sharing on data communication network. When there is a slight difference from the used initial value, it will cause a huge difference in the cipher-text produced using chaos. This makes the system to be secure from brute force attacks and it is difficult to make long term predictions on chaotic systems. Due to the properties of chaos system, recent researches of encryption algorithms have been increasingly based on chaotic systems [6,7,8,9]
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