Abstract
The lattice locations of Te and Sn atoms forming {ital DX} centers in Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As were determined by particle-induced x-ray emission and ion-beam-channeling methods. The Te atoms were found to be in the As substitutional sites while the Sn atoms were in the Ga(Al) sites. No off-center displacement of Te and Sn larger than 0.14 A from the substitutional sites was observed in either system.
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