Abstract
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 °C. The h-BN films form ∼2-μm size grains with a preferred orientation of 30° relative to the surface graphene. Low-energy electron microscopy is employed to provide definitive signatures of the number and composition of two-dimensional planes across the surface. These grains are found to form by substitution for the surface graphene, with the C atoms produced by this substitution, then being incorporated below the h-BN (at the interface between the existing graphene and the SiC) to form a new graphene plane.
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