Abstract
A virtually complete picture of the substitutional-interstitial diffusion mechanism occurring in semiconductors is described. The mechanism is modelled on the computer using a numerical technique without attempting to employ differential equations. The interstitial impurity atoms are taken to diffuse with a finite diffusion coefficient. Interstitial diffusion and self-diffusion by atoms of the host crystal are taken to occur independently and do not interfere with each other. The system is allowed to approach towards equilibrium after interstitial and self-diffusion within an iteration time. The effect on the diffusion profiles of the variation of such parameters as diffusion time, diffusion coefficients and the bulk generation of vacancies are studied. Results obtained from this work are consistent with published experimental diffusion work on semiconductor systems.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
