Abstract
This study demonstrates the efficient photo-annealing of a solution-processed metal oxide active layer in thin film transistors by using intensely pulsed white light (IPWL) irradiation. The IPWL process offers the advantages of room-temperature processing and high processing speed of the order of milliseconds under ambient conditions. Analysis of the chemical composition of the IPWL-annealed thin films indicates that the IPWL irradiation provides sufficient heat energy to convert the molecular precursors to the respective metal oxides. A solution-processed amorphous In–Ga–Zn–O transistor annealed by IPWL irradiation exhibited improved electrical performance with a field-effect mobility of 2.67 cm2 V−1 s−1 and Ion/Ioff of 108. The suitability of IPWL for annealing other solution-processed metal oxide semiconductors was verified in IPWL-annealed Hf–In–Zn–O and In–Zn–O thin films.
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