Abstract
Laser-induced contamination (LIC) degrades the performance of optical components and can result in optical losses or even laser-induced damage. LIC deposit formation limits reliable operation of high repetition rate industrial lasers. In this work, we investigate LIC growth on dielectric oxide thin films in air environment irradiated by MHz sub-ps laser at 515 nm. We study the LIC growth dynamic in dependence on thin film deposition method, thin film material and thin film thickness.
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