Abstract
Electron transient transport in an InxGa1−xAs-based (x=0.53) p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
