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Abstract
Transient carrier transport phenomena in anIn0.53Ga0.47As-based p–i–n semiconductor nanostructure have been studied by using subpicosecondtransient/time-resolved Raman spectroscopy. We observe an instability of the GaAs-likeoptical phonon population in this nanostructure semiconductor that occurs when electronsare accelerated to very high velocities by the application of intense electric fields. Theresults open up a new channel for creating coherent THz frequency that can be used inTHz electronic devices. We suggest that the observed phenomena will have enormousimpact on the carrier dynamics and carrier transport in nanoscale semiconductor electronicdevices.
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