Abstract
Passive modelocking in one-section monolithic semiconductor laser diodes based on a quantum dash active layer at very high repetition rate (>40 GHz), in the 1.5 µm window, is demonstrated. 800 fs pulse generation, without any pulse compression scheme, at 134 GHz, is reported. A 50 kHz linewidth of the radiofrequency (RF) spectrum at 42 GHz is also demonstrated, the lowest value reported for any semiconductor passively modelocked laser.
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