Abstract
Femtosecond time-resolved reflectivity investigations reveal a significant reduction in carrier lifetime from 100ps in nonintentionally doped InP to less than 1ps in S, Fe, and Zn doped InP. This reduction is because S, Fe, and Zn in InP serve as recombination and trapping centers. Photoluminescence and Raman measurements were used to confirm these results.
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