Abstract
The transient photoconductivity in a 1 μm layer of low temperature grown GaAs (LT-GaAs) on a GaAs substrate was measured using time-resolved terahertz spectroscopy. When photoexcitation occurs at 400 nm we find a time-dependent mobility that increases from 400±100 to 1100±100 cm2 V−1 s−1 with a time constant of 2 ps. Photoexcitation at 800 nm produces a time-independent mobility of 3000±500 cm2 V−1 s−1. We determine the carrier lifetime in LT-GaAs to be 1.1 ± 0.1 ps.
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