Abstract
A new method for Auger depth profiling, employing a difference in the escape depth of the Auger electrons emitted at nearly normal and glancing angles, is proposed and verified. The depth profiles obtained under optimum ion sputtering conditions with registration of the glancing Auger electrons exhibit a subnanometer (0.8 nm) depth resolution. This technique was successfully applied to the study of high-quality InxGa1−xAs/GaAs heterostructures with quantum wells grown by the method of metalorganic chemical vapor deposition.
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