Abstract
Hole-drift-type Si IMPATT diodes were fabricated and their oscillation characteristics were examined. Doping structure of the diodes was p+ -p-n+. The wafer was made by thermal diffusion and ion implantation into n- on n+ epitaxial wafer. The diode thickness was made thin, 5∼10 µm, to reduce series resistance. Continuous wave oscillation was observed in wide frequency range from 70 GHz to near 400 GHz. Output powers of 82 mW at 187 GHz with an efficiency of 2.5% and 7.5 mW at 285 GHz were obtained. The highest oscillation frequency measured to date is 394 GHz.
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