Abstract
We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2–0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2–4 μm diameter active region formed by chemical selective etching, and sandwiched between two Al0.05Ga0.95 As/ Al0.53Ga0.47 As distributed Bragg reflectors of very high reflectivity (98–99%) grown by metalorganic chemical vapor deposition.
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