Abstract
The microelectronic process we propose in this paper has been developed in order to bury a metallic grating in silicon material. A good control of dimensions in the 0.5-μm period range and an excellent crystallinity of the embedding semiconductor are the two major characteristics of this process. Using this technique, permeable base transistors have been made, the characteristics of which are given and briefly discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.