Submicron lithography and DUV-master masks made by ion projection lithography

Abstract

Ion beam induced changes of the physical and chemical properties of PMMA have been performed in a locally selective mode with an Ion Projection Lithography Machine IPLM-01. Sub 0.5 μm resolution has been achieved using PMMA as positive or negative (image reversal) ion sensitive resist. UV- and DUV-transmission loss of thin PMMA films on quartz due to ion implantation has been shown to yield a mask fabrication process for UV and DUV lithography. Excimer laser exposure of PBS through these direct implanted masks gives submicron resolution.