Abstract
Submicron etched beam splitters are designed, fabricated and characterized in Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</sub> As-GaAs waveguides. Beam splitter transmission and reflection characteristics show clear dependence on gap dimension and angle of incidence. It is possible to obtain 8 to 30% power transmission by adjusting the gap dimension and angle of incidence. The experimental results agree well with three-dimensional (3-D) finite difference time domain (FDTD) simulations. The effect of imperfections, mainly the slope of etched sidewalls and variations in etch depth are investigated using 3-D FDTD. Design guidelines for low loss etched beam splitters are also given.
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