Abstract

In this work, a submicron-diameter single crystal sapphire optical fiber was demonstrated via wet acid etching at elevated temperatures. Etch rates on the order 2.3µm/h were achievable with a 3:1 molar ratio sulfuric–phosphoric acid solution maintained at a temperature of 343°C. A sapphire fiber with an approximate diameter of 800nm was successfully fabricated from a commercially available fiber with an original diameter of 50µm. The simple and controllable etching technique provides a feasible approach to the fabrication of unique waveguide structures via traditional silica masking techniques. The ability to tailor the geometry of sapphire optical fibers is the first step in achieving optical and sensing performance on par with its fused silica counterpart.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call