Abstract
We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of $0.2~\mu \text{m}$ for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of $0.2~\mu \text{m}$ were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 ${\mathrm {cm}}^{\text {2}}/\text{V}\cdot \text{s}$ . After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 ${\mathrm {cm}}^{\text {2}}/\text{V}\cdot \text{s}$ .
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