Abstract
We investigated sublimation of a heavily boron-doped Si(111) surface in comparison with that of a normal Si(111) surface in ultrahigh vacuum. Step spacing during step-flow sublimation is analyzed as a measure of the adatom diffusion length using >50-\ensuremath{\mu}m-wide (111) planes created at the bottom of craters. On the heavily doped 1\ifmmode\times\else\texttimes\fi{}1 surface, the step spacing is smaller and the step-spacing transition (or ``incomplete surface melting'' transition) temperature is 60\ifmmode^\circ\else\textdegree\fi{} higher than those on the normal 1\ifmmode\times\else\texttimes\fi{}1 surface. These results are interpreted in terms of the effect of boron at ${S}_{5}$ substitutional sites. Below 1100 \ifmmode^\circ\else\textdegree\fi{}C, the sublimation of heavily doped surface on the wide terrace turns into a two-dimensional vacancy-island nucleation mode from step-flow sublimation observed above 1100 \ifmmode^\circ\else\textdegree\fi{}C.
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