Abstract
ABSTRACTSublimation growth of 6H-SiC was performed on {1100} and {1120} substrates. The difference between the growth on {1100} plane and {1120} plane was observed. {1100} facet was almost flat and there were grooves oriented toward <1120> direction. The step bunching was observed on {1100} plane 5° off-axis. A lot of pits were introduced on {1120} plane of the crystal grown both on {1100} and {1120} substrates. Step flow growth toward <1120> direction created the pits on {1120} plane. It was important to grow crystal by layer by layer growth on {1120} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {1120} plane may be reduced as same as CVD growth on {1120} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.
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