Abstract
At sufficiently high gate voltages an unexpected, quasi-subharmonic sequence of peaks appears in addition to the usual cyclotron resonance of electrons in an inversion layer on p-type (100) Si. We suggest the effect to be caused by resonance between Landau levels perturbed by negatively charged trap states at the SiSiO 2 interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
