Subgigahertz Multilayer-Graphene Nanoelectromechanical System Integrated with a Nanometer-Scale Silicon Transistor Driven by Reflectometry

Abstract

A high-frequency nanoelectromechanical system (NEMS) based on a graphene membrane is a candidate for sensing applications, as well as a platform for fundamental research, but detecting such high-frequency oscillations of small membrane displacement is technically challenging. The authors integrate a high-sensitivity transistor with a multilayer graphene NEMS and drive the transistor via double resonant circuits at an electrical resonance. By optimizing the resonant circuits and driving the transistor with an rf signal, the high-frequency NEMS signal can be detected. This technique is useful for realizing NEMS applications at subgigahertz or higher frequencies.