Abstract
A thin‐film AlGaInP/AlGaAs/InGaAs/InGaAs inverted metamorphic multijunction solar cell with a bandgap of 1.96/1.53/1.16/0.83 eV is fabricated. The photoelectric conversion efficiency reaches 34.89% with an open‐circuit voltage of 3.54 V under AM1.5 G spectrum. The analysis of individual subcells is the key to evaluating the performance of multijunction solar cells. The current density versus voltage characteristics of four subcells are calculated using optoelectronic reciprocity relation between the external quantum efficiency and the different injection current densities electroluminescence. The analysis of the performance characteristics of four subcells concludes that the key to limiting the overall efficiency improvement is the deep‐level recombination of the AlGaInP top subcell and the bulk recombination of 0.83 eV InGaAs bottom subcell. Targeted optimization of the top subcell and the bottom subcell is expected to significantly improve efficiency.
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