Abstract
light absorption is a substantial problem that profoundly influences a wide range of disciplines. Whereas it is fundamentally restricted by the bandgap energy of the involved materials. Herein, we study the sub-bandgap light absorption in germanium films via Berreman mode (BE) and its enhancement through weak coupling to Fabry-Perot cavity mode. This enhancement is performed by integrating the semiconductor film into a microcavity structure and tune its resonance frequency to match the epsilon-near-zero (ENZ) wavelength of the film material in a planar multilayer structure. We ascertained that our approach of electric field confinement in the semiconductor layer could perform significant light absorption at large incidence angles. That provides a novel, general, and simple method to enhance the optical and optoelectronic responses of any ENZ material, especially semiconductors below their bandgap energies.
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