Abstract
Splitting between equivalent valleys larger than the spin splitting energy is observed in confined electron systems, e.g. Si films grown either on SiGe substrate or Si dioxide and Si/SiGe quantum dots. Understanding the contribution of different factors in the valley degeneracy lifting is of key importance for the development of spin-based devices in Si. We demonstrate that the splitting between equivalent valleys strongly depends on the confinement direction and that it is orientation dependent. To explain the effect we use a simple but accurate two-band k·p model for the conduction band in silicon. Our data is in good agreement with recent results obtained by first-principle calculations.
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