Abstract
Surface channel tunnel junctions (SCTJ) can be fabricated by replacing the usual degenerate n-type source contact on a weakly p-type substrate by a highly degenerate p-type source. In the presence of a gate voltage strong enough to produce a surface inversion layer, a tunnel junction connecting the three-dimensional p + source and the quasi-two-dimensional n-type surface channel can occur. The I- V characteristics of this SCTJ will yield valuable information about the subband splittings and other electronic properties of the surface inversion layer.
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