Sub-100-nm three-dimensional nanoimprint lithography

Abstract

In the next generation, there is going to be a strong need for three-dimensional nanoscale patterning technology for various optical devices and dual damascene process. A breakthrough in this field has been made by nanoimprint lithography (NIL) because of its lower cost and process simplicity. In this current study, the characteristics of proximity effect caused by forward scattering of electrons with spin on glass, which is used as a positive-tone inorganic resist, was examined using low-acceleration-voltage (<5kV) electron-beam lithography. As a result, a sub-100-nm three-dimensional nanoimprint mold was fabricated by control-of-acceleration-voltage electron-beam lithography. And by using ultraviolet NIL, a replicated pattern was obtained that approximately corresponded to the fabricated mold.