Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2 (Adv. Funct. Mater. 43/2021)

Abstract

Negative Capacitance In article number 2103748, Sunkook Kim and co-workers effectively utilize combustion chemistry in solution-processed ferroelectric-Hf0.5Zr0.5O2 to realize negative capacitance and effectively utilize the same to achieve ultra-low-power operation of MoS2 transistors via sub-60 mV/dec switching. This is the first study extending the applicability of solution-processed oxide ferroelectrics to a completely new avenue of high mobility, ultra-low-power electronics.