Abstract
We report the rapid fabrication of high performance solution-processed In2O3 and heterojunction In2O3/ZnO based transistors via photonic processing in ambient air.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
