Abstract
All-optical gate-switch operation utilizing GaN intersubband-transition has been achieved by reducing edge dislocation density in the epitaxial layers. The diminution of dislocation was accomplished by MBE regrowth on an MOCVD-grown layer. Excess propagation loss for transverse magnetic polarization decreased due to the reduction of the dislocation. By the improvement of the propagation property, sub-picosecond all-optical gate with an extinction ratio of more than 10 dB was accomplished with an input pulse energy of 150 pJ. Moreover, the insertion loss with the switch on was improved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
