Abstract
We report sub-nanosecond switching of a metal–oxide–metal memristor utilizing abroadband 20 GHz experimental setup developed to observe fast switching dynamics. Setand reset operations were successfully performed in the tantalum oxide memristorusing pulses with durations of 105 and 120 ps, respectively. Reproducibility of thesub-nanosecond switching was also confirmed as the device switched over consecutivecycles.
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