Abstract
A Nd:GdVO4/GaAs passively Q-switched laser has been demonstrated based on a microchip design. Under high pump power, the high optical intensity inside the laser cavity triggered the two photon absorption of GaAs, and the pulse duration was shortened to sub-nanosecond level. The shortest pulse of 690ps was obtained, which we believe is the shortest pulse ever generated with a pure GaAs saturable absorber. The maximum average output power, highest repetition rate, largest pulse energy, and highest peak power were 1W, 190kHz, 7.5μJ, and 10.8kW, respectively. The results indicated that GaAs is a promising passively Q-switched saturable absorber and still has potential to explore.
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