Abstract
Diode-pumped continuous-wave and passively Q-switched Nd:LuAG ceramic microchip lasers at 1064 nm and 1053 nm have been demonstrated, for the first time to our knowledge. For the continuous-wave operation, the achieved maximum output powers of the two lasers reaches 1.62 W and 0.75 W, respectively. Using Cr:YAG crystal as saturable absorber, the two lasers can also been operated in passively Q-switched regimes with sub-nanosecond pulse durations of 489 ps and 556 ps, respectively. The maximum single pulse energy and pulse peak power for the 1064 nm and 1053 nm lasers are calculated to be about 22.25 μJ and 45.49 kW, as well as 12.74 μJ and 22.91 kW. All solid-state microchip lasers give the tremendous potential for high performance laser generation with sub-nanosecond short pulse duration, high single pulse energy and high pulse peak power.
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